| EDFP112A3PB-GD-F-D | DRAM & SDRAM | The EDFP112A3PB-GD-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GD-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $89.99 | OBSOLETE | RFQ |
| EDFP112A3PB-GD-F-D TR | DRAM & SDRAM | The EDFP112A3PB-GD-F-D TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GD-F-D TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PB-GD-F-R | DRAM & SDRAM | The EDFP112A3PB-GD-F-R is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GD-F-R is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $2.64 | OBSOLETE | RFQ |
| EDFP112A3PB-GD-F-R TR | DRAM & SDRAM | The EDFP112A3PB-GD-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GD-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PB-GDTJ-F-D | DRAM & SDRAM | The EDFP112A3PB-GDTJ-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GDTJ-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PB-GDTJ-F-R | DRAM & SDRAM | The EDFP112A3PB-GDTJ-F-R is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GDTJ-F-R is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $27.39 | OBSOLETE | RFQ |
| EDFP112A3PB-GDTJ-F-R TR | DRAM & SDRAM | The EDFP112A3PB-GDTJ-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-GDTJ-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PB-JD-F-D | DRAM & SDRAM | The EDFP112A3PB-JD-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-JD-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $5.27 | OBSOLETE | RFQ |
| EDFP112A3PB-JD-F-D TR | DRAM & SDRAM | The EDFP112A3PB-JD-F-D TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-JD-F-D TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PB-JD-F-R | DRAM & SDRAM | The EDFP112A3PB-JD-F-R is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-JD-F-R is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $89.99 | OBSOLETE | RFQ |
| EDFP112A3PB-JD-F-R TR | DRAM & SDRAM | The EDFP112A3PB-JD-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-JD-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PB-JDTJ-F-D | DRAM & SDRAM | The EDFP112A3PB-JDTJ-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-JDTJ-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $63.79 | OBSOLETE | RFQ |
| EDFP112A3PB-JDTJ-F-R TR | DRAM & SDRAM | The EDFP112A3PB-JDTJ-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PB-JDTJ-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $27.39 | OBSOLETE | RFQ |
| EDFP112A3PD-GD-F-D | DRAM & SDRAM | The EDFP112A3PD-GD-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PD-GD-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | RFQ | OBSOLETE | RFQ |
| EDFP112A3PD-GD-F-R TR | DRAM & SDRAM | The EDFP112A3PD-GD-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PD-GD-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $34.01 | OBSOLETE | RFQ |
| EDFP112A3PF-GD-F-D | DRAM & SDRAM | The EDFP112A3PF-GD-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PF-GD-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $59.69 | OBSOLETE | RFQ |
| EDFP112A3PF-GD-F-R TR | DRAM & SDRAM | The EDFP112A3PF-GD-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PF-GD-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $27.39 | OBSOLETE | RFQ |
| EDFP112A3PF-GDTJ-F-D | DRAM & SDRAM | The EDFP112A3PF-GDTJ-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PF-GDTJ-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $60.62 | OBSOLETE | RFQ |
| EDFP112A3PF-GDTJ-F-R TR | DRAM & SDRAM | The EDFP112A3PF-GDTJ-F-R TR is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 105°C (TC). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PF-GDTJ-F-R TR is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $27.39 | OBSOLETE | RFQ |
| EDFP112A3PF-JD-F-D | DRAM & SDRAM | The EDFP112A3PF-JD-F-D is a DRAM memory device manufactured by Micron Technology Inc.. Key technical specifications include 24Gb (192M x 128) memory size, 1.14V ~ 1.95V supply voltage, and Volatile memory type; design review should also confirm memory interface timing, SRAM, DRAM, flash, or EEPROM compatibility, and supply voltage. This - component is supplied in a standard package and is rated for operation across -30°C ~ 85°C (TA). Designed for data center storage, consumer electronics, and automotive infotainment applications, the EDFP112A3PF-JD-F-D is no longer produced by Micron Technology Inc.; FPGACenter maintains verified stock sourced through certified supply chain partners. | — | RFQ for sourcing | $73.36 | OBSOLETE | RFQ |